Polarization processes and electric transformations in pyrolytic oxides SiO2 on the surface of indium antimonide

Changes of a flatband voltage, V-C characteristics hysteresis width, injection stability, density of the surface states after polarization at elevated temperatures with a subsequent cooling are studied. It is shown that a change of electrical parameters of MOS-structures is associated with a field dissociation of water molecules, spatial separation of protons H+ and ions OH-, their partial discharging at the interface and the uccerence of electrochemical reactions oxidation - reduction