Published September 1982
| Version v1
Journal article
Heterojunctions n-InSe-p-Gasub(0.98)Bisub(0.02)Te
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Гетеропереходы н-InSe-п-Гасуб(0.98)Бисуб(0.02)Те
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Issue
- v 16(9
- Series
- Fiz. Tekh. Poluprovodn.
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 14762850
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- BISMUTH TELLURIDES; ELECTRIC CONDUCTIVITY; GALLIUM TELLURIDES; INDIUM SELENIDES; MONOCRYSTALS; NEAR INFRARED RADIATION; P-N JUNCTIONS; PHOTOSENSITIVITY; SOLID SOLUTIONS; VISIBLE RADIATION
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; CRYSTALS; DISPERSIONS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; HOMOGENEOUS MIXTURES; INDIUM COMPOUNDS; INFRARED RADIATION; MIXTURES; PHYSICAL PROPERTIES; RADIATIONS; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SENSITIVITY; SOLUTIONS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- Short note. For English translation see the journal Soviet Physics - Semiconductors (USA).