Published November 21, 2015
| Version v1
Journal article
Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb
Creators
- 1. Department of Physics and Astronomy, University of California, Irvine, California 92697 (United States)
- 2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Description
We calculate the wave functions and the energy levels of an exciton in double quantum wells under electric (F) and magnetic (B) fields along the growth axis. The result is employed to study the energy levels, the binding energy, and the boundary on the F–B plane of the phase between the indirect exciton ground state and the semiconductor ground state for several typical structures of the type-II quasi-two-dimensional quantum wells such as InAs/AlSb/GaSb. The inter-well inter-band radiative transition rates are calculated for exciton creation and recombination. We find that the rates are modulated over several orders of magnitude by the electric and magnetic fields
Additional details
Identifiers
- DOI
- 10.1063/1.4935546;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 118
- Journal Issue
- 19
- Journal Page Range
- p. 195705-195705.7
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47063090
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- BINDING ENERGY; EXCITONS; GALLIUM ANTIMONIDES; GROUND STATES; INDIUM ARSENIDES; MAGNETIC FIELDS; QUANTUM WELLS; RECOMBINATION; SEMICONDUCTOR MATERIALS; TWO-DIMENSIONAL SYSTEMS; WAVE FUNCTIONS
- Descriptors DEC
- ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ENERGY; ENERGY LEVELS; FUNCTIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PNICTIDES; QUASI PARTICLES
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC