Published December 2009 | Version v1
Journal article Metadata-only

Temperature dependence of the excitonic transition energy in flat semiconductor nanofilms

Creators

  • 1. Chernivtsi National University, Chernivtsi (Ukraine)

Description

The Green's function method has been applied to study the temperature dependence of the exciton ground state energy in a flat semiconductor nanofilm. The binding energy of an exciton and its temperature dependence have been evaluated within the Bethe method.

Additional details

Additional titles

Original title (Ukrainian)
Temperaturna zalezhnyist' energyiyi eksitonnogo perekhodu u ploskikh napyivprovyidnikovikh nanoplyivkakh

Publishing Information

Journal Title
Ukrayins'kij Fyizichnij Zhurnal (Kyiv)
Journal Volume
54
Journal Issue
no.12
Journal Page Range
p. 1226-1234
ISSN
0372-400X

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
41071747
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BINDING ENERGY; ELECTRON-PHONON COUPLING; EXCITONS; FILMS; GREEN FUNCTION; HETEROJUNCTIONS; MATHEMATICAL MODELS; NANOSTRUCTURES; NUMERICAL ANALYSIS; POTENTIALS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
COUPLING; ENERGY; FUNCTIONS; MATERIALS; MATHEMATICS; QUASI PARTICLES; SEMICONDUCTOR JUNCTIONS; TEMPERATURE RANGE