Published July 21, 1974
| Version v1
Journal article
Recrystallization of SiC thin films
Description
Thin films of SIC have been prepared by electron-beam evaporation. By being pulse-annealed in the electron microscope, as-deposited noncrystalline films recrystallize and grow, first in polycrystalline 2H and 3C phases and subsequently into syntactic 2H and 3C single crystals.
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics D: Applied Physics
- Journal Volume
- 7
- Journal Issue
- 11
- Series
- J. Phys., D (London).
- Journal Page Range
- 1482-1484
- ISSN
- 0022-3727
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 5151823
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ELECTRON BEAMS; EVAPORATION; FILMS; PULSES; RECRYSTALLIZATION; SILICON CARBIDES; THICKNESS
- Descriptors DEC
- BEAMS; CARBIDES; CARBON COMPOUNDS; DIMENSIONS; HEAT TREATMENTS; LEPTON BEAMS; PARTICLE BEAMS; PHASE TRANSFORMATIONS; SILICON COMPOUNDS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent