Junction parameters and characterization of Au/n-Ge₁₅In₅Se₈₀/p-Si/Al heterojunction

The analysis of the electrical properties of Au/n-Ge₁₅In₅Se₈₀/p-Si/Al heterojunction is examined. I-V characteristics show diode-like behavior. The series resistance is found to decrease with increasing the temperature in three different methods of calculations. The thermionic emission mechanism is found to be the operating mechanism at relatively low forward voltages (V < 0.25). While, at relatively high forward voltage, the space charge limited conduction is the operating mechanism. The rectification ratio, ideality factor, barrier height, total trap concentration and built-in voltage are determined. The capacitance-voltage (C-V) characteristics of Au/n-Ge₁₅In₅Se₈₀/p-Si/Al heterojunction are also investigated. The I-V curve of the Au/n-Ge₁₅In₅Se₈₀/p-Si/Al heterojunction in the dark and after illumination is clarified. (orig.)