Published January 2006
| Version v1
Journal article
Effect of thermal annealing on the optical and structural properties of silicon implanted with a high hydrogen fluence
- 1. Instituto Tecnologico e Nuclear, Estrada Nacional 10, 2686-953 Sacavem (Portugal) and Centro de Fisica Nuclear da Universidade de Lisboa, 1649-003 Lisbon (Portugal)
- 2. Centro de Fisica Nuclear da Universidade de Lisboa, 1649-003 Lisbon (Portugal)
- 3. Departamento de Tecnologia Electronica, E.T.S.I. de Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain)
- 4. Universidad de Valladolid, Departamento de Fisica de la Materia Condensada, 47011 Valladolid (Spain)
Description
Silicon capped by thermal oxide has been implanted with 1 x 1017 H/cm2 and the implant profile peaking at the interface. Samples were subjected to thermal annealing and characterized by ERD, FTIR, RBS/channeling, UV/VIS reflectance and cathodoluminescence regarding H-content, crystalline quality and light emission. The results show that the luminescent properties are independent of the hydrogen content but are strongly related with the present damage
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2005.08.087;
- PII
- S0168-583X(05)01626-5;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 242
- Journal Issue
- 1-2
- Journal Page Range
- p. 650-652
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 14. international conference on ion beam modification of materials
- Dates
- 5-10 Sep 2004
- Place
- Pacific Grove, CA (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37068540
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CATHODOLUMINESCENCE; CHANNELING; DAMAGE; FOURIER TRANSFORMATION; HYDROGEN; INFRARED SPECTRA; INTERFACES; OXIDES; REFLECTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; EMISSION; HEAT TREATMENTS; INTEGRAL TRANSFORMATIONS; LUMINESCENCE; NONMETALS; OXYGEN COMPOUNDS; PHOTON EMISSION; SEMIMETALS; SPECTRA; SPECTROSCOPY; TRANSFORMATIONS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.