Published August 1, 1995
| Version v1
Journal article
Large-area avalanche photodiodes for the detection of soft x rays
- 1. Center for X-Ray Optics, Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
- 2. Department of Physics, Universidad de Santiago, Avda. Ecuador 3493, Casilla 307, Santiago (Chile)
- 3. Advance Photonix Inc., 1240 Avenida Acaso, California 93012 (United States)
Description
The charge-collection efficiency of beveled-edge-type silicon avalanche photodiodes has been determined for soft x rays in the 50--300-eV range. An efficiency of greater than 80% is measured for energies below the Si L absorption edge. The measured efficiency is well described by a model that accounts for absorption in an oxide overlayer and recombination at the front surface of the diode. The avalanche photodiodes are shown to be significantly more sensitive compared with other detectors for pulsed sources such as a laser-produced plasma source. These results are also very encouraging for soft-x-ray/extreme-UV applications involving synchrotron radiation.PACS numbers: 29.40.Wk, 07.85.+n, 85.60.Dw
Additional details
Publishing Information
- Journal Title
- Applied Optics
- Journal Volume
- 34
- Journal Issue
- 22
- Journal Page Range
- p. 4662-4668.
- ISSN
- 0003-6935
- CODEN
- APOPAI
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27015895
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- DESIGN; PHOTODIODES; PHOTOSENSITIVITY; SOFT X RADIATION; X-RAY DETECTION
- Descriptors DEC
- DETECTION; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; RADIATION DETECTION; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SENSITIVITY; X RADIATION