Alloying of Ni/In/Ni/n-GaAs ohmic contacts induced by Ga-Ni-As ternary eutectic reactions
Creators
- 1. Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706 (USA)
Description
The alloying behavior of Ni and Ni/In/Ni thin-film contacts to GaAs was studied using scanning electron microscopy and scanning Auger microscopy. A liquid was observed to form in both contacts upon annealing at 820 degree C for three min. The cause of this behavior was postulated to be the presence of a ternary eutectic reaction in the gallium-nickel-arsenic system. Differential thermal analysis confirmed the existence in this system of the reaction L→NiGa+NiAs+GaAs at 810 degree C. It was speculated that the liquid phase observed in the Ni/In/Ni contacts was due to the rapid segregation of indium metal to the contact surface and the subsequent melting of the nearly ternary interfacial region. These results demonstrated the inadequacy of rationalizing reactions between metals and compound semiconductors in terms of constituent binary phase equilibria
Additional details
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 68
- Journal Issue
- 12
- Series
- J. Appl. Phys.
- Journal Page Range
- 6458-6462
- ISSN
- 0021-8979
- CODEN
- JAPIA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22042228
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHEMICAL REACTIONS; DIFFERENTIAL THERMAL ANALYSIS; FILMS; GALLIUM ARSENIDES; INDIUM ALLOYS; JOINTS; METALLURGY; N-TYPE CONDUCTORS; NICKEL ALLOYS; PHASE STUDIES; SCANNING ELECTRON MICROSCOPY; SEGREGATION
- Descriptors DEC
- ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; GALLIUM COMPOUNDS; HEAT TREATMENTS; MATERIALS; MICROSCOPY; PNICTIDES; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; THERMAL ANALYSIS