Published May 2015 | Version v1
Journal article

Effects of large laser bandwidth on stimulated Raman scattering instability in underdense plasma

  • 1. Key Laboratory for Laser Plasmas (MoE) and Department of Physics and Astronomy, IFSA Collaborative Innovation Center, Shanghai Jiao Tong University, Shanghai 200240 (China)
  • 2. Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States)
  • 3. Department of Mechanical Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, New York 14627 (United States)
  • 4. East-West Space Science Center, University of Maryland, College Park, Maryland 20742, USA and Chao Kuang Piu College, University of Macau, Macau 999078 (China)
  • 5. SUPA, Department of Physics, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

Description

The effects of laser bandwidth on stimulated Raman scattering (SRS) instability in underdense plasma are studied by particle-in-cell simulations. In the simulations, sinusoidal frequency modulation of the incident laser pulse is used. By changing the size of bandwidth, it is shown that the linear growth of SRS can be suppressed considerably, provided the laser bandwidth is much larger than the SRS linear growth rate. Simulations also show that by choosing the proper frequency modulation parameters or decreasing the linear growth rate of SRS, the inhibitory effects become more obvious. The plasma electron temperature tends to weaken the bandwidth effects especially when it is over a keV level. The laser bandwidth can only increase the time duration for linear growth but cannot diminish the instability completely

Additional details

Identifiers

Publishing Information

Journal Title
Physics of Plasmas
Journal Volume
22
Journal Issue
5
Journal Page Range
p. 052119-052119.7
ISSN
1070-664X
CODEN
PHPAEN

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46116162
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Descriptors DEI
ELECTRON TEMPERATURE; FREQUENCY MODULATION; KEV RANGE; LASER RADIATION; PLASMA SIMULATION; PULSES; RAMAN EFFECT
Descriptors DEC
ELECTROMAGNETIC RADIATION; ENERGY RANGE; MODULATION; RADIATIONS; SIMULATION

Optional Information

Notes
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