Gunn diodes based on graded-gap semiconductor nitrides with boron nitride

The paper presents the results of numerical experiments on the oscillation generation using the n⁺-n-n⁺ transfer electron device based on InBN and GaBN graded gap semiconductor compounds at different BN distribution. We had obtained the output characteristics of diodes in a wide range of frequencies from 30 to 700 GHz. Cutoff frequency has been estimated. At optimal BN distribution graded-gap semiconductor InBN and GaBN Gunn diodes for efficiency exceed GaN and InN diodes by more than two times. Power consumption of graded gap InBN and GaBN diodes is 11 19% less the power consumption of InN and GaN diodes. (authors)