Dosimetric properties of MOS transistors
Creators
- 1. Ceske Vysoke Uceni Technicke, Prague (Czechoslovakia). Fakulta Jaderna a Fysikalne Inzenyrska
Description
The structure of MOS transistors is described and their characteristics given. The experiments performed and data in the literature show the following dosimetric properties of MOS transistors: while for low gamma doses the transistor response to exposure is linear, it shows saturation for higher doses (exceeding 103 Gy in tissue). The response is independent of the energy of radiation and of the dose rate (within 10-2 to 105 Gy/s). The spontaneous reduction with time of the spatial charge captured by the oxide layer (fading) is small and acceptable from the point of view of dosimetry. Curves are given of isochronous annealing of the transistors following irradiation with 137Cs and 18 MeV electrons for different voltages during irradiation. The curves show that in MOS transistors irradiated with high-energy electrons the effect of annealing is less than in transistors irradiated with 137Cs. In view of the requirement of using higher temperatures (approx. 400 degC) for the complete ''erasing'' of the captured charge, unsealed systems must be used for dosimetric purposes. The effect was also studied of neutron radiation, proton radiation and electron radiation on the MOS transistor structure. For MOS transistor irradiation with 14 MeV neutrons from a neutron generator the response was 4% of that for gamma radiation at the same dose equivalent. The effect of proton radiation was studied as related to the changes in MOS transistor structure during space flights. The response curve shapes are similar to those of gamma radiation curves. The effect of electron radiation on the MOS structure was studied by many authors. The experiments show that for each thickness of the SiO2 layer an electron energy exists at which the size of the charge captured in SiO2 is the greatest. All data show that MOS transistors are promising for radiation dosimetry. The main advantage of MOS transistors as gamma dosemeters is the ease and speed of evaluation, low sensitivity to neutron radiation, small dimensions and possible re-use after heat treatment. Low sensitivity is their disadvantage. (J.P.)
Additional details
Additional titles
- Original title (Czech)
- Dozimetricke vlastnosti MOS tranzistoru
Publishing Information
- Journal Title
- Jad. Energ.
- Journal Volume
- 23
- Journal Issue
- 7
- Series
- Jad. Energ.
- Journal Page Range
- 258-263
INIS
- Country of Publication
- Serbia and Montenegro
- Country of Input or Organization
- Serbia and Montenegro
- INIS RN
- 9383868
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ANNEALING; DOSE-RESPONSE RELATIONSHIPS; ENERGY DEPENDENCE; GAMMA DOSIMETRY; GAMMA RADIATION; MOS TRANSISTORS; PERFORMANCE; PHYSICAL RADIATION EFFECTS; SILICON OXIDES; SPACE CHARGE; TIME DEPENDENCE; TRAPPING
- Descriptors DEC
- CHALCOGENIDES; DOSIMETRY; ELECTROMAGNETIC RADIATION; HEAT TREATMENTS; IONIZING RADIATIONS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TRANSISTORS