Effects of Zn Amount on the Properties of Zn-Cu2O Composite Films Grown for PEC Photoelectrodes by Using Electrochemical Deposition
- 1. Inje University, Gimhae (Korea, Republic of)
- 2. Dong-Eui University, Busan (Korea, Republic of)
Description
In this study, Zn-Cu2O composite films were grown on fluorine-doped tin-oxide (FTO) substrates by using the electrochemical deposition method. Various amounts of Zinc (Zn) were added to grow the Zn-Cu2O composite films. We analyzed the morphological, structural, optical energy band gap and photocurrent density properties of the Zn-Cu2O composite films by using various measurements such as field-emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD), UV-visible spectrophotometry and potentiostat/galvanostat measurements, respectively. As a result, the highest photocurrent density value of −4.04 mA/cm2 was obtained for the 30-wt% sample, which had the lowest Cu2O (111)/ ZnO (101) XRD peak intensity ratio. The highest photocurrent density value from the 30-wt% sample was approximately 2.35 times higher than that from the non-composite Cu2O film (0-wt% sample). From this study, we found that adding Zn could improve the photocurrent values of Zn-Cu2O composite films.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 67
- Journal Issue
- 7
- Series
- 28 refs, 4 figs
- Journal Page Range
- p. 1273-1277
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 49069650
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHEMICAL PROPERTIES; CURRENT DENSITY; DEPOSITION; MORPHOLOGY; TIN OXIDES; X-RAY DIFFRACTION; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; OXIDES; OXYGEN COMPOUNDS; SCATTERING; TIN COMPOUNDS; ZINC COMPOUNDS