Published March 2004 | Version v1
Journal article Metadata-only

Electrophysical properties of the GaAs layers and features of the high-energy particle detectors on their basis

Creators

  • 1. Moskovskij Gosudarstvennyj Inst. Ehlektronnoj Tekhniki (Tekhnicheskij Univ.), Moscow (Russian Federation)
  • 2. Zakrytoe Aktsionernoe Obshchestvo Ehlma-Malakhit, Moscow (Russian Federation)
  • 3. Federal'noe Gosudarstvennoe Unitarnoe Predpriyatie Nauchno-Issledovatel'skij Inst. Fizicheskikh Problem im. F.V. Lukina, Moscow (Russian Federation)

Description

The results of the experimental complex studies on the interrelation of the initial properties of the monocrystalline plates and epitaxial structures of the gallium arsenide with the spectrometric threshold characteristics of the ionizing radiation detectors on the basis thereof are presented. The conclusion is made that the results of the experimental complex studies make it possible to considered the unalloyed GaAs as a perspective material for the γ-quanta and particles detectors with the energies within the range of 10 keV-10 MeV

Abstract (Russian)

Представлены результаты экспериментальных комплексных исследований взаимосвязи свойств исходных монокристаллических пластин и эпитаксиальных структур арсенида галлия со спектрометрическими пороговыми характеристиками детекторов ионизирующих излучений на их основе. Сделан вывод, что результаты комплексных экспериментальных исследований позволяют считать нелегированный GaAs перспективным материалом для детекторов γ-квантов с энергиями в диапазоне 10 кэВ-10 МэВ

Additional details

Additional titles

Original title (Russian)
Электрофизические свойства GaAs слоев и особенности характеристик детекторов частиц высоких энергих на их основе

Publishing Information

Journal Title
Zhurnal Tekhnicheskoj Fiziki
Journal Volume
74
Journal Issue
3
Journal Page Range
p. 28-36
ISSN
0044-4642
CODEN
ZTEFA3

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
37046354
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ELECTRON DETECTION; EPITAXY; FREQUENCY DEPENDENCE; GALLIUM ARSENIDES; GAMMA DETECTION; KHZ RANGE; LAYERS; MONOCRYSTALS; PERFORMANCE; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THRESHOLD DETECTORS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLE DETECTION; CRYSTAL GROWTH METHODS; CRYSTALS; DETECTION; FREQUENCY RANGE; GALLIUM COMPOUNDS; MEASURING INSTRUMENTS; NEUTRON DETECTORS; PNICTIDES; RADIATION DETECTION; RADIATION DETECTORS; RADIATION EFFECTS; TEMPERATURE RANGE

Optional Information

Notes
20 refs., 6 figs., 3 tabs.