Published March 1991 | Version v1
Journal article

Scanning tunneling microscopy observation of local damages induced on graphite surface by ion implantation

  • 1. Ecole Centrale de Lyon, Ecully (France)

Description

This paper presents a STM study relative to the first step in the modification of a graphite surface on which argon ions of 50 keV kinetic energy have been implanted. Very low ion doses (∼ 1011 ions cm-2) were used in order to isolate single-ion impacts and to characterize the damages due to one ion impact on the surface. Implantations were performed on highly oriented pyrolytic graphite (HOPG) whose lamellar structure allows easy cleavage and preparation of large flat terraces extending over hundreds of nanometers. Such flat standard surfaces are well suited to study the effects of ion bombardment

Additional details

Publishing Information

Journal Title
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Journal Volume
9
Journal Issue
2
Series
J. Vac. Sci. Technol., B Microelectron. Process. Phenom.
Journal Page Range
1064-1067
ISSN
0734-211X
CODEN
JVTBD

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
23070855
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ARGON; GRAPHITE; ION IMPLANTATION; KEV RANGE 10-100; MICROSCOPY; MINING; PHYSICAL RADIATION EFFECTS; TOPOLOGY
Descriptors DEC
CARBON; ELEMENTS; ENERGY RANGE; KEV RANGE; MATHEMATICS; NONMETALS; RADIATION EFFECTS; RARE GASES