Published August 5, 2016 | Version v1
Journal article

Atomic vacancies significantly degrade the mechanical properties of phosphorene

  • 1. International Center for Applied Mechanics, State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi'an Jiaotong University, Xi'an 710049 (China)
  • 2. Institute of High Performance Computing, A*STAR, Singapore 138632 (Singapore)
  • 3. School of Computing, Engineering and Mathematics, Western Sydney University, Penrith, NSW 2751 (Australia)

Description

Due to low formation energies, it is very easy to create atomic defects in phosphorene during its fabrication process. How these atomic defects affect its mechanical behavior, however, remain unknown. Here, we report on a systematic study of the effect of atomic vacancies on the mechanical properties and failure behavior of phosphorene using molecular dynamics simulations. It is found that atomic vacancies induce local stress concentration and cause early bond-breaking, leading to a significant degradation of the mechanical properties of the material. More specifically, a 2% concentration of randomly distributed mono-vacancies is able to reduce the fracture strength by ∼40%. An increase in temperature from 10 to 400 K can further deteriorate the fracture strength by ∼60%. The fracture strength of defective phosphorene is also found to be affected by defect distribution. When the defects are patterned in a line, the reduction in fracture strength greatly depends on the tilt angle and the loading direction. Furthermore, we find that di-vacancies cause an even larger reduction in fracture strength than mono-vacancies when the loading is in an armchair direction. These findings provide important guidelines for the structural design of phosphorene in future applications. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/27/31/315704

Additional details

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
27
Journal Issue
31
Journal Page Range
[9 p.]
ISSN
0957-4484