Measurements of ion-implantation damage in GaP

We have applied stress measurements using the cantilever beam technique and Raman spectroscopy to characterize the dose dependence of damage production for He+, C+, or Ar+ implants into GaP. Stress increases monotonically with dose until a species-dependent critical dose is reached. Above that dose, the material yields at an integrated lateral stress of approx. 2 x 105 dynes/cm, corresponding to an expansion of approx. 1% in the implanted volume. The dose dependence of stress scales well with the volume density of ion energy deposited into atomic collisions. Raman measurements indicate that the material is still crystalline when the yield stress is reached