Magnetic properties of two dimensional silicon carbide triangular nanoflakes-based kagome lattices
Creators
- 1. Peking University, Center for Applied Physics and Technology, College of Engineering (China)
- 2. Peking University, Department of Materials Science and Engineering (China)
- 3. Virginia Commonwealth University, Department of Physics (United States)
Description
Two-dimensional (2D) magnetic kagome lattices are constructed using silicon carbide triangular nanoflakes (SiC-TNFs). Two types of structures with alternating Si and C atoms are studied: the first one is constructed using the C-edged SiC-TNFs as the building blocks and C atoms as the linkers of kagome sites (TNFN–C–TNFN) while the second one is composed of the Si-edged SiC-TNFs with Si atoms as linkers (TNFN–Si–TNFN). Using density functional theory-based calculations, we show that the fully relaxed TNFN–C–TNFN retains the morphology of regular kagome lattice and is ferromagnetism. On the other hand, the TNFN–Si–TNFN structure is deformed and antiferromagnetic. However, the ground state of TNFN–Si–TNFN structure can be transformed from the antiferromagnetic to ferromagnetic state by applying tensile strain. Monte Carlo simulations indicate that the SiC-TNFs-based kagome lattices can be ferromagnetic at room temperature.
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Nanoparticle Research
- Journal Volume
- 14
- Journal Issue
- 8
- Journal Page Range
- p. 1-7
- ISSN
- 1388-0764
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44036628
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANTIFERROMAGNETISM; COMPUTERIZED SIMULATION; DENSITY FUNCTIONAL METHOD; FERROMAGNETISM; GROUND STATES; MAGNETIC PROPERTIES; MONTE CARLO METHOD; MORPHOLOGY; NANOSTRUCTURES; SILICON CARBIDES; STRAINS; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- CALCULATION METHODS; CARBIDES; CARBON COMPOUNDS; ENERGY LEVELS; MAGNETISM; PHYSICAL PROPERTIES; SILICON COMPOUNDS; SIMULATION; TEMPERATURE RANGE; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2012 Springer Science+Business Media B.V.