Nucleation of tin on the Cu6Sn5 layer in electronic interconnections
Description
A Cu6Sn5 layer is an integral part of many electronic interconnections. Here we show that, although primary Cu6Sn5 is not a potent nucleant for Sn, the Cu6Sn5 layer plays a key role in Sn nucleation and microstructure formation in solder joints. Combining thermal analysis, FIB-tomography and EBSD, we show that conical cavities are present between the scallops of the Cu6Sn5 layer that act as geometric nucleation sites for Sn, that Sn grows from the Cu6Sn5 layer, and that reproducible nucleation orientation relationships (ORs) exist between Cu6Sn5 and Sn. With these ORs, a near-random distribution of Sn orientations is predicted from joint to joint even for Cu6Sn5 layers with a strong [0001] fibre texture. It is shown that the nucleation undercooling is strongly affected by manipulation of the Cu6Sn5 layer shape, and that it is possible to prevent nucleation on the Cu6Sn5 layer by adding more potent nucleants.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.actamat.2016.10.008Additional details
Identifiers
- DOI
- 10.1016/j.actamat.2016.10.008;
- PII
- S1359-6454(16)30763-7;
Publishing Information
- Journal Title
- Acta Materialia
- Journal Volume
- 123
- Journal Page Range
- p. 404-415
- ISSN
- 1359-6454
- CODEN
- ACMAFD
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48092146
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BACKSCATTERING; COPPER SELENIDES; ELECTRON DIFFRACTION; NUCLEATION; SOLDERED JOINTS; THERMAL ANALYSIS
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; COPPER COMPOUNDS; DIFFRACTION; JOINTS; SCATTERING; SELENIDES; SELENIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.