Published March 1995
| Version v1
Journal article
Photoconductivity caused by the tellurium impurity in germanium
- 1. Gosudarstvennyj Tekhnicheskij Univ., Sankt-Peterburg, (Russian Federation)
Description
Energy spectrum of tellurium atoms in germanium has been investigated. A large peak at 375 meV in the photoconductivity spectra is shown to be due to transitions of tellurium ions into excited state. Tellurium charge state was controlled by gallium doping. 5 refs., 2 figs
Additional details
Additional titles
- Original title (Russian)
- Фотопроводимост', связанная с примесью теллура в германии
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 29
- Journal Issue
- 3
- Journal Page Range
- p. 483-486.
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26078932
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHARGE STATES; CRYSTAL DOPING; ENERGY DEPENDENCE; GALLIUM ADDITIONS; GERMANIUM; MEV RANGE 100-1000; PHOTOCONDUCTIVITY; TELLURIUM ADDITIONS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K
- Descriptors DEC
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY RANGE; METALS; MEV RANGE; PHYSICAL PROPERTIES; TEMPERATURE RANGE