Modelling of space-charge accumulation process in dielectrics of MDS structures under irradiation

Results of numerical modelling of radiation-induced space charge (RISC) accumulation in MOS structure silicon dioxide are given. Diffusion-drift model which takes account of trap heterogeneous distribution within dielectric volume and channeling of carriers captured at traps represents basis for calculations. Main physical processes affecting RISC accumulation are picked out and character of capture filling in dielectric volume under stress in MOS structure shutter during irradiation on the basis of comparison of experimental results for different thickness oxides with calculation data are predicted