Published 2005
| Version v1
Journal article
Electron and hole storage in InAs/GaAs quantum dots
- 1. Inst. fuer Festkoerperphysik, TU Berlin (Germany)
- 2. Ioffe Physico-Technical Inst. RAS, St. Petersburg (Russian Federation)
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Volume
- 40
- Journal Issue
- 2
- Journal Page Range
- p. 247
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- Physics since Albert Einstein
- Original Conference Title
- Jahrestagung 2005 der Deutschen Physikalischen Gesellschaft (DPG) im World Year of Physics: Physik seit Albert Einstein
- Acronym
- 2005 annual conference of the German Physical Society (DPG) during the World year of physics
- Dates
- 4-9 Mar 2005
- Place
- Berlin (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 36039070
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CHARGE CARRIERS; ELECTRONIC STRUCTURE; ELECTRONS; EXCITATION; GALLIUM ARSENIDES; GROUND STATES; HOLES; INDIUM ARSENIDES; LASER RADIATION; LINE BROADENING; MOLECULAR BEAM EPITAXY; PHOTON COLLISIONS; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SPECTRAL SHIFT
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COLLISIONS; CRYSTAL GROWTH METHODS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; EPITAXY; FERMIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LEPTONS; MATERIALS; NANOSTRUCTURES; PNICTIDES; RADIATIONS