The effect of substrate temperature on structural and morphological properties of Au/Si(1 1 1) thin films
Creators
- 1. Department of Molecular and Biomolecular Physics, National Institute for Research and Development of Isotopic and Molecular Technologies, Donath 63-105, 400293 Cluj-Napoca (Romania)
- 2. Faculty of Physics, Babeş-Bolyai University, Kogălniceanu 1, 400084 Cluj-Napoca (Romania)
Description
We report here the effects of substrate temperature on the orientation and surface morphology of 100 nm thick gold films, using scanning tunneling microscopy and X-ray diffraction. The gold films were deposited using molecular beam epitaxy technique onto Si(1 1 1) 7 × 7 substrates. Ex situ characterizations are performed using scanning tunneling microscope at room temperature. X-ray diffraction measurements reveal the (1 1 1) orientation of the film deposited at 580 °C. We present data showing the evolution of the RMS roughness amplitude of the gold films as a function of substrate temperature during deposition. For our purposes, the best compromise between roughness and grain size is found to occur for a substrate temperature maintained at 580 °C.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2013.10.001Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2013.10.001;
- PII
- S0169-4332(13)01844-8;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 288
- Journal Page Range
- p. 166-171
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46004970
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMPLITUDES; DEPOSITION; GOLD; GRAIN SIZE; MOLECULAR BEAM EPITAXY; ROUGHNESS; SCANNING TUNNELING MICROSCOPY; SILICON; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELEMENTS; EPITAXY; FILMS; METALS; MICROSCOPY; MICROSTRUCTURE; SCATTERING; SEMIMETALS; SIZE; SURFACE PROPERTIES; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.