Published June 1989 | Version v1
Journal article Metadata-only

Investigation of fluctuations of the electrical resistivity of γ-doped silicon

Creators

  • 1. M. I. Kalinin Polytechnic Institute, Leningrad (USSR)

Description

An investigation was made of fluctuations of the electrical resistivity of p-type silicon doped with aluminum by nuclear reactions induced as a result of bombardment with γ rays, which introduced impurity atoms in concentrations up to 1014 cm-3. The γ-doping method made is possible to prepare p-type silicon single crystals with resistivity macroinhomogeneities and microinhomogeneities amounting to a few percent

Additional details

Publishing Information

Journal Title
Soviet Physics - Semiconductors (English Translation)
Journal Volume
23
Journal Issue
6
Series
Sov. Phys. - Semicond. (Engl. Transl.).
Journal Page Range
679-681
ISSN
0038-5700
CODEN
SPSEA

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
21070825
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
DATA PROCESSING; DOPED MATERIALS; ELECTRICAL PROPERTIES; EXPERIMENTAL DATA; GAMMA RADIATION; MEASURING INSTRUMENTS; MEASURING METHODS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; USSR
Descriptors DEC
DATA; DEVELOPED COUNTRIES; ELECTROMAGNETIC RADIATION; ELEMENTS; EUROPE; INFORMATION; IONIZING RADIATIONS; MATERIALS; NUMERICAL DATA; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SEMIMETALS

Optional Information

Notes
Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (US SR).