Published November 2008 | Version v1
Journal article

Electrical and Magnetic Properties of FeSi2 Nanowires

  • 1. School of Science, Beijing Institute of Technology, Beijing 100081 (China)
  • 2. Science and Engineering of Materials Program, Arizona State University, Tempe, AZ, 85287 (United States)

Description

We report the characterization of self-assembled epitaxially grown FeSi2 nanowires (NWs) in terms of electrical and magnetic properties. NWs grown by reactive deposition epitaxy (RDE) on silicon (110) show dimensions of 10nm × 5nm, and several micrometres in length. By using conductive-AFM (c-AFM), electron transport properties of one single NW is measured, resistivity of a single crystalline FeSi'2 NW is estimated to be 225 μΩ·cm. Using superconducting quantum interference device (SQUID), we measure a magnetic moment of 0.3 ± 0.1 Bohr magneton per iron atom for these FeSi2 NWs. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/25/11/075

Additional details

Identifiers

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
25
Journal Issue
11
Journal Page Range
p. 4113-4116
ISSN
0256-307X
CODEN
CPLEEU