Published October 2001
| Version v1
Report
MOVPE of (AlGaIn)P under the carrier gas nitrogen for LED structures
Description
This thesis dealt with the metal-organic gas phase epitaxy with nitrogen as carrier gas. For this first by means of three-dimensional modelings of the epitaxy process the influence of the carrier gas on the processes was explained. The optimization of the growth parameter for the whole light-emitting-diode structure in double-hetero arrangement resulted that an a temperature of 770 C and a V/ III-ratio of 150 layers with a high crystal quality could be reached
Availability note (English)
Available from TIB Hannover: RA 831(3909)Additional details
Additional titles
- Original title (German)
- MOVPE von (AlGaIn)P unter dem Traegergas Stickstoff fuer LED-Strukturen
Publishing Information
- Imprint Pagination
- 135 p.
- ISSN
- 0944-2952
- Report number
- Juel--3909
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 33016441
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Thesis, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM PHOSPHIDES; CRYSTAL DOPING; CRYSTAL STRUCTURE; DOPED MATERIALS; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; LIGHT EMITTING DIODES; NITROGEN; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; TEMPERATURE RANGE 1000-4000 K; VAPOR PHASE EPITAXY
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CRYSTAL GROWTH METHODS; ELEMENTS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NONMETALS; ORGANIC COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE RANGE