Interdiffusion and grain-boundary migration in Au/Cu bilayers during ion-irradiation
Creators
- 1. Materials Science Div., Argonne National Lab., Argonne, IL (United States)
Description
Ion irradiation and annealing experiments have been conducted on Au/Cu bilayer films to evaluate the effect of irradiation of diffusion-induced grain boundary migration (DIGM). The AU films were prepared with a large-grained microstructure with grain boundaries perpendicular to the film surface and extending through the film thickness. Irradiation were conducted with 1.5 MeV Kr at 228 degrees C. Rutherford backscattering spectrometry of the samples revealed that interdiffusion was substantially enhanced in the irradiated area relative to the unirradiated area. Both irradiated and annealed-only areas were characterized by a nearly uniform composition of 14 at.% and 7 at.% Cu respectively through the entire thickness of the underlying Au film. Small probe X-ray energy dispersive spectroscopy showed significant lateral compositional homogeneities in both irradiated and annealed areas. These two results are consistent with previous observations of DIGM in the Au/Cu system, suggesting that this previously unexamined interdiffusion mechanism contributes to ion beam mixing
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (United States)
- ISBN
- 1-55899-129-8
- Imprint Title
- Proceedings of the phase formation and modification by beam-solid interactions
- Imprint Pagination
- 913 p.
- Journal Page Range
- p. 559-564.
Conference
- Title
- Annual fall meeting of the Materials Research Society.
- Dates
- 2-6 Dec 1991.
- Place
- Boston, MA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24009955
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; COPPER; DIFFUSION; FILMS; GOLD; GRAIN BOUNDARIES; KRYPTON IONS; LAYERS; MEV RANGE 01-10; MICROSTRUCTURE; PHYSICAL RADIATION EFFECTS; RUTHERFORD SCATTERING; TEMPERATURE RANGE 0400-1000 K; THICKNESS; X-RAY SPECTROSCOPY
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL STRUCTURE; DIMENSIONS; ELASTIC SCATTERING; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; METALS; MEV RANGE; RADIATION EFFECTS; SCATTERING; SPECTROSCOPY; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Secondary number(s)
- CONF-911202--.