Negative resistance in CdIn2S4 single crystals

Experimental observation of an N-type negative resistance in CdIn2S4 single crystals when illuminated with light is presented. Different from data reported so far with other substances, a hysteresis is observed in the U-I characteristics in the case of CdIn2S4 single crystals. This hysteresis is due to a transition through the thermal quenching process between two different states which have two different resistive states, i.e. a low resistive state and a high resistive one. It is confirmed that these two different states are theoretically possible to exist in the sample and may be due to In-ion displacement. (author)