Published November 1, 2010 | Version v1
Journal article

Achievements and perspectives of CMOS pixel sensors for charged particle tracking

Creators

  • 1. IPHC, 23 rue du loess, 67037 Strasbourg Cedex 02 (France)

Description

Main achievements of more than one decade of CMOS pixel sensor R and D for charged particle tracking are reviewed in this paper, together with the goals driving present R and D activities, i.e. read-out speed and radiation tolerance. A fast read-out sensor developed for the EUDET beam telescope and the STAR vertex detector is described as well as its first test results. Preliminary results are also provided on non-ionising radiation tolerance improvements offered by CMOS processes featuring a depleted epitaxial layer. Finally, the recent access to 3D Integration Technologies, which alleviate most essential CMOS sensor's limitations, has translated into 2- and 3-tier sensor designs, to be fabricated in Spring 2009. Their main design features and expected performances are reviewed.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nima.2010.02.192

Additional details

Identifiers

DOI
10.1016/j.nima.2010.02.192;
PII
S0168-9002(10)00477-8;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
623
Journal Issue
1
Journal Page Range
p. 192-194
ISSN
0168-9002
CODEN
NIMAER

Conference

Title
1. international conference on technology and instrumentation in particle physics
Dates
12-17 Mar 2009
Place
Tsukuba (Japan)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42014748
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BEAMS; CHARGED PARTICLES; DESIGN; EPITAXY; IONIZING RADIATIONS; LAYERS; PERFORMANCE; READOUT SYSTEMS; SENSORS; SI MICROSTRIP DETECTORS; SPRINGS; TELESCOPES; TOLERANCE
Descriptors DEC
CRYSTAL GROWTH METHODS; MACHINE PARTS; MEASURING INSTRUMENTS; RADIATION DETECTORS; RADIATIONS; SEMICONDUCTOR DETECTORS; SI SEMICONDUCTOR DETECTORS

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.