Dislocation-free etching figures in crystals of CdxHg1-xTe solid solutions

Using the method of chemical etching, etching figures formed in areas distributed over CdxHg1-xTe crystal with increased content of impurities consisting of Si,Al,Na,K,Cl,Fe,Ti,Mg and S mainly are revealed. The size of impurity inclusions is >1μm, that is why they cannot be detected either by optical microscopy or local microroentgenospectral analysis. Formation and distribution of impurity inclusions are obviously defined by only the concentration of impurity atoms in the melt. The shape of etching figures does not depend on crystallographical orientation of the crystal-matrix