Ion implant gettering of generation impurities in silicon investigated using PIXE and Rutherford backscattering spectrometry

This paper describes Ar-ion implant damage gettering of generation impurities in silicon examined using Rutherford backscattering and PIXE. The implants were performed on the back surface of the silicon wafers using an ion energy of 180 keV to give a dose of 1016 Ar ions/cm2. After annealing the damaged layer RBS using4 He+ ions, and PIXE, was undertaken both on the implant damage surface layer and some 40 μm into the bulk of the same wafer. The concentration of various generation impurities such as Fe, Cu, Zn were higher in the damaged layer than in the bulk of the same waver indicating that the implant damaged layer had been effective in gettering them. PIXE was employed, as a complementary technique to RBS, to substantiate the presence of these impurities arising from the RBS spectra. (orig.)