Published September 23, 2009 | Version v1
Journal article

Improved photoluminescence of vertically aligned ZnO nanorods grown on BaSrTiO3 by pulsed laser deposition

  • 1. University of Dayton Research Institute, Dayton, OH 45469 (United States)
  • 2. Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433 (United States)
  • 3. University of Dayton, Dayton, OH 45469 (United States)
  • 4. Semiconductor Research Center, Wright State University, Dayton, OH 45435 (United States)

Description

ZnO nanorods were grown on a variety of substrates such as Si, SiO2/Si and sapphire in a large-area pulsed laser deposition chamber designed for sensor device fabrication. Processing conditions were optimized to grow ZnO nanorods with or without seed layers. Au, Cr and BaSrTiO3 (BST) seed layers were investigated to compare their effects on the diameter and orientation of ZnO nanorods. ZnO nanorods were observed to align better when grown on sapphire, Cr or BST seed layers as compared to Au or Si layers. The highest quality nanorods were those grown on BST seed layers, as shown by 4 K photoluminescence donor-bound-exciton linewidths of only 0.5 meV.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/20/38/385706

Additional details

Identifiers

DOI
10.1088/0957-4484/20/38/385706;
PII
S0957-4484(09)12230-4;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
20
Journal Issue
38
Journal Page Range
[5 p.]
ISSN
0957-4484