Light-emitting diodes based on quaternary CdZnSeS quantum dots
Creators
- 1. Centro de Investigaciones en Óptica, AP 1-948, León, Gto, 37150 (Mexico)
- 2. Unidad Académica de Ingeniería Eléctrica, Universidad Autónoma de Zacatecas, Av. Ramón López Velarde 801, Zacatecas, Zac, 98060 (Mexico)
- 3. Laboratorio de Nanotecnología Ambiental, Tecnológico de Monterrey, Escuela de Ingeniería y Ciencias, Ave. Eugenio Garza Sada 2501, Monterrey, N.L, 64849 (Mexico)
- 4. Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, AP 126-F, Monterrey, N.L, 66450 (Mexico)
- 5. Instituto de Investigación en Metalurgia y Materiales, Universidad Michoacana de San Nicolás de Hidalgo, Edificio U, Ciudad Universitaria, Morelia, Mich, 58030 (Mexico)
Description
Highlights: • Highly reproducible quaternary CdZnSeS quantum dots (QDs) have been synthesized. • CdZnSeS QDs were used as the emissive layer in light-emitting diodes (LEDs). • The devices emitted a bright single color of blue, green, or red. Highly reproducible quaternary CdZnSeS quantum dots (QDs) have been synthesized by the hot injection method using the reactivity difference between the molar ratio of Cd/Zn and Se/S precursors. The obtained QDs exhibit characteristics of quaternary CdZnSeS QDs. The morphology of the CdZnSeS QDs was observed in the TEM. The average size of the QDs was in the range between 5.5 and 7.5 nm for reaction times between 5 and 60 min, respectively. High photoluminescence emission, in the range from 460 to 680 nm, was obtained varying the Cd to Zn and the Se to S concentrations. Varying the concentration of Zn and S, emissions of blue, green, yellow, or red, were obtained. Additionally, the CdZnSeS QDs were used as the emissive layer in light-emitting diodes (LEDs) prepared with the configuration ITO/PEDOT:PSS/PVK/CdZnSeS/Al. These devices emitted a bright single color of blue, green, or red.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jlumin.2021.118025Additional details
Identifiers
- DOI
- 10.1016/j.jlumin.2021.118025;
- PII
- S0022231321001411;
Publishing Information
- Journal Title
- Journal of Luminescence
- Journal Volume
- 235
- Journal Page Range
- vp.
- ISSN
- 0022-2313
- CODEN
- JLUMA8
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54019382
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CONCENTRATION RATIO; LAYERS; LIGHT EMITTING DIODES; MORPHOLOGY; PHOTOLUMINESCENCE; QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- DIMENSIONLESS NUMBERS; ELECTRON MICROSCOPY; EMISSION; LUMINESCENCE; MICROSCOPY; NANOSTRUCTURES; PHOTON EMISSION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Copyright
- Copyright (c) 2021 Elsevier B.V. All rights reserved.