Published January 1999 | Version v1
Journal article

SPICE evaluation of the S/N ratio for Si microstrip detectors

  • 1. Padova Univ. (Italy). Dip. di Elettronica e Informatica
  • 2. INFN, Istituto Nazionale di Fisica Nucleare, Padova (Italy)

Description

SPICE simulations of AC-coupled single-sided Si microstrip detectors connected to the Pre-Shape 32 read-out chip have been performed in order to determine the geometrical characteristics which maximize the signal-to-noise ratio at room temperature. All the resistive and capacitive elements of the detector have been determined as a function of the ω/ρ ratio, by considering experimental and simulated data available in the literature. The SPICE model takes into account all the main noise source in the detector and read-out electronics. The minimum ionizing particle current signal shape characteristics have been introduced in the simulations. Two read-out configurations have been investigated for 6.4 cm and 12.8 cm long detectors. Finally, general guidelines in the detector design have been proposed starting from the simulation results

Additional details

Publishing Information

Journal Title
Nuovo Cimento. A
Journal Volume
112A
Journal Issue
1-2
Journal Page Range
p. 75-85
ISSN
0369-3546

Conference

Title
3. International Conference on Large Scale Applications and Radiations Hardness of Silicon Detectors
Dates
1-3 Oct 1997
Place
Florence (Italy)

INIS

Country of Publication
Italy
Country of Input or Organization
Italy
INIS RN
31000555
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CIRCUIT THEORY; COMPUTER-AIDED DESIGN; SI SEMICONDUCTOR DETECTORS; SIGNAL-TO-NOISE RATIO; SIMULATION
Descriptors DEC
DESIGN; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS