Published May 30, 1994
| Version v1
Journal article
Growth of InSb using tris(dimethylamino)antimony and trimethylindium
Creators
- 1. Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185 (United States)
Description
We have grown epitaxial layers of InSb on p--InSb substrates by metalorganic chemical vapor deposition using tris(dimethylamino)antimony (TDMASb) and trimethylindium (TMIn). Growth temperatures from 285 to 500 degree C and pressures from 76 to 660 Torr have been investigated. The V/III ratio was varied from 0.63 to 8.6 using growth rates from 0.06 to 0.67 μm/h. For temperatures ≤425 degree C, the growth rate was proportional to the temperature. The growth rate was proportional to the TMIn flow at all temperatures. Temperatures >400 degree C produced p-type layers while growth temperatures ≤400 degree C produce n-type layers. The pyrolysis temperature of TDMASb appears to be lower than that of TMIn
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 64
- Journal Issue
- 22
- Journal Page Range
- p. 3021-3023.
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 25057841
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- EPITAXY; HALL EFFECT; INDIUM ANTIMONIDES; PRESSURE DEPENDENCE; PYROLYSIS; TEMPERATURE DEPENDENCE; VAPOR DEPOSITED COATINGS
- Descriptors DEC
- ANTIMONIDES; ANTIMONY COMPOUNDS; CHEMICAL REACTIONS; COATINGS; CRYSTAL GROWTH METHODS; DECOMPOSITION; INDIUM COMPOUNDS; PNICTIDES