Published August 2007
| Version v1
Journal article
Local structure of Mn implanted in gallium arsenide
- 1. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
- 2. Nuclear Science and Technology Development Center, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
- 3. Department of Electrical Engineering, Chung Cheng Institute of Technology, 335, Taiwan (China)
- 4. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China)
Description
Mn ions (80 keV) were implanted into p-GaAs substrate at room temperature. Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission (PIXE) with channeling and X-ray absorption structure (XAS) measurements were applied to analyze the local structural environment of the Mn implanted in the host GaAs lattice before and after annealing. The preliminary results showed that the implanted Mn ions preferred to reside on a substitutional site after annealing
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2007.04.311;
- PII
- S0168-583X(07)01012-9;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 261
- Journal Issue
- 1-2
- Journal Page Range
- p. 570-573
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 19. international conference on the application of accelerators in research and industry
- Dates
- 20-25 Aug 2006
- Place
- Fort Worth, TX (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39027265
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION; ABSORPTION SPECTROSCOPY; ANNEALING; CRYSTALLIZATION; EPITAXY; GALLIUM ARSENIDES; ION BEAMS; ION IMPLANTATION; KEV RANGE; MANGANESE IONS; PIXE ANALYSIS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; X RADIATION; X-RAY SPECTROSCOPY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHARGED PARTICLES; CHEMICAL ANALYSIS; CRYSTAL GROWTH METHODS; ELECTROMAGNETIC RADIATION; ENERGY RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONIZING RADIATIONS; IONS; MATERIALS; NONDESTRUCTIVE ANALYSIS; PHASE TRANSFORMATIONS; PNICTIDES; RADIATIONS; SORPTION; SPECTROSCOPY; TEMPERATURE RANGE; X-RAY EMISSION ANALYSIS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.