Systematic investigation of structural and magnetic properties in molecular beam epitaxial growth of metastable zinc-blende CrTe toward half-metallicity
- 1. Data Storage Institute, 5 Engineering Drive 1, Singapore 117608 (Singapore)
- 2. Information Storage Materials Laboratory, Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)
Description
We report a systematic investigation on the structural and magnetic properties of molecular-beam epitaxial growth of CrTe thin films with different layer thicknesses and Cr/Te flux ratios. A phase diagram of the growth parameters is established based on the detailed analyses of the reflection high-energy electron diffraction patterns, atomic force microscopy, and magnetization. Our high-resolution transmission electron microscopy results show that under appropriate growth conditions, a metastable zinc-blende (ZB) phase of CrTe film can be achieved with a nominal thickness of 5 nm. The magnetic properties of ZB CrTe exhibit a strong in-plane anisotropy with an easy axis along the [001] direction and hard axes along the [011] and [011] directions. Correspondingly, the uniaxial (KU) and cubic (KC) anisotropy constants are obtained through the fitting of the [011] hard-axis direction. The temperature dependence of the remanent magnetization indicates the TC∼100 K of ZB CrTe is attained
Additional details
Identifiers
- DOI
- 10.1063/1.2885108;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 103
- Journal Issue
- 4
- Journal Page Range
- p. 043908-043908.5
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40015312
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANISOTROPY; ATOMIC FORCE MICROSCOPY; CHROMIUM COMPOUNDS; CRYSTAL GROWTH; ELECTRON DIFFRACTION; FERROMAGNETIC MATERIALS; MAGNETIC PROPERTIES; MAGNETIZATION; MOLECULAR BEAM EPITAXY; PHASE DIAGRAMS; TELLURIUM COMPOUNDS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; THICKNESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDES
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIAGRAMS; DIFFRACTION; DIMENSIONS; ELECTRON MICROSCOPY; EPITAXY; FILMS; INFORMATION; INORGANIC PHOSPHORS; MAGNETIC MATERIALS; MATERIALS; MICROSCOPY; PHOSPHORS; PHYSICAL PROPERTIES; SCATTERING; SULFIDES; SULFUR COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2008 American Institute of Physics