Published June 30, 2019 | Version v1
Journal article

Interface-induced d0 ferromagnetism in undoped ZnO thin films grown on different oriented sapphire substrates

  • 1. Chongqing Normal University, Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering (China)
  • 2. Chongqing University of Arts and Sciences, Research Institute for New Materials Technology (China)
  • 3. Chongqing University, College of Physics (China)

Description

The origin of d0 ferromagnetism in ZnO material still remains an open question. Here, we report a systematic study of the structural, optical, Raman and magnetic properties of undoped ZnO films grown on a-, c-, m- and r-plane sapphire substrates by radio frequency magnetron sputtering at room temperature. It is found that the polarity of the substrate does not affect the preferential growth of undoped ZnO film along the c-axis, but it will obviously affect the species and concentration of intrinsic defects in films, thereby regulating the optical and Raman properties of undoped ZnO films. Magnetic measurement reveals that all undoped ZnO films exhibit clear hysteresis loops at room temperature, confirming the presence of room temperature ferromagnetism. Furthermore, the relationship between intrinsic defects and magnetic properties was discussed, which suggests that the observed ferromagnetic order has nothing to do with the internal intrinsic defects in undoped ZnO films, but is derived from the interface effects between the undoped ZnO films and the substrates.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Materials Science. Materials in Electronics
Journal Volume
30
Journal Issue
12
Journal Page Range
p. 11086-11093
ISSN
0957-4522
CODEN
JSMEEV

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Copyright (c) 2019 Springer Science+Business Media, LLC, part of Springer Nature