Published 2004
| Version v1
Miscellaneous
High resolution XRD characterization of SiGe:C structures for high frequency microelectronics applications
Creators
- 1. IHP - Innovations for High Performance Microelectronics, Im Technologiepark, Frankfurt (Germany)
Description
no abstract available
Additional details
Additional titles
- Augmented title (English)
- thin films
Publishing Information
- Imprint Title
- Abstracts of International Conference on Experimental and Computing Methods in High Resolution Diffraction Applied for Structure Characterization of Modern Materials - HREDAMM
- Imprint Pagination
- 98 p.
- Journal Page Range
- p. 54-55
Conference
- Title
- International Conference on Experimental and Computing Methods in High Resolution Diffraction Applied for Structure Characterization of Modern Materials - HREDAMM
- Dates
- 13-17 Jun 2004
- Place
- Zakopane (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 37011107
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- CARBON ADDITIONS; CHEMICAL VAPOR DEPOSITION; COMPUTERIZED SIMULATION; DOPED MATERIALS; GERMANIDES; LAYERS; MICROELECTRONICS; MOLECULAR BEAM EPITAXY; ROUGHNESS; SILICON COMPOUNDS; SPATIAL RESOLUTION; STRAINS; THICKNESS; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOYS; CHEMICAL COATING; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DEPOSITION; DIFFRACTION; DIMENSIONS; EPITAXY; FILMS; GERMANIUM COMPOUNDS; MATERIALS; RESOLUTION; SCATTERING; SIMULATION; SURFACE COATING; SURFACE PROPERTIES
Optional Information
- Notes
- 1 fig.