High-power 0.98 µm range diode lasers based on InGaAs/GaAs quantum well-dot active region

We present a study of characteristics of the edge-emitting lasers operating in the 0.98 μm wavelength range and based on a new type of InGaAs/GaAs active region – quantum well-dots (QWD). Utilizing the QWD active region in broadened 1.3 μm waveguide (BWG) allowed us to decrease the internal loss down to 0.5 cm⁻¹ and to demonstrate the maximum output power of 13W and 50W in continuous wave (CW) and pulse operation regimes respectively. The investigation of the lasing spectra under high pulse injection currents revealed the overheating of the active region in the devices with moderate waveguide thickness (0.68 μm) in contrast with BWG devices. (paper)