Published July 2019
| Version v1
Journal article
Exchange bias in defect-induced ferromagnetic SiC
- 1. School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an, 710071, People's Republic of (China)
Description
In this paper, the observation of exchange bias in defective ferromagnetic SiC is presented. Two typical features of exchange bias are clearly observed: the shift of magnetic hysteresis upon field cooling and the training effect. A core-shell morphology particle model is employed to quantitatively analyze the exchange bias field dependence on the cooling field. Based on the model, the calculated anisotropy constant is 2.5 × 105 erg/cm3. The training effect can be described by the Kolmogorov-Avrami model, which is used for the classical exchange bias system. The appearance of exchange bias is the signature of the existence of an interface between ferromagnetic and antiferromagnetic layers or cores/shells.
Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2019.01.018;
- PII
- S0304885318334747;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 481
- Journal Page Range
- p. 1-5
- ISSN
- 0304-8853
- CODEN
- JMMMDC
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55025307
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANISOTROPY; ANTIFERROMAGNETISM; MORPHOLOGY; PARTICLE MODELS; SILICON CARBIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; MAGNETISM; MATHEMATICAL MODELS; SILICON COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2019 Elsevier B.V. All rights reserved.