Published 1993
| Version v1
Miscellaneous
Structure changing and impurity behaviour in silicon under phosphorus 'hot' implantation and annealing
Creators
Description
Short communication
Additional details
Additional titles
- Original title (Russian)
- Структурные изменения и поведение примеси в кремнии при 'горячей' имплантации фосфора и отжиге
Publishing Information
- Imprint Title
- Thesies of the proceedings of the 23. International meeting on the physics of charged particle interaction with crystals
- Imprint Pagination
- 148 p.
- Journal Page Range
- p. 77.
- Report number
- INIS-RU--377
Conference
- Title
- 23. International meeting on the physics of charged particle interaction with crystals.
- Original Conference Title
- 23. Mezhnatsional'noe soveshchanie po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
- Dates
- 31 May - 2 Jun 1993.
- Place
- Moscow (Russian Federation).
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26019025
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; DISLOCATIONS; IMPURITIES; ION IMPLANTATION; KEV RANGE 10-100; ORIENTATION; P-TYPE CONDUCTORS; PHOSPHORUS IONS; POINT DEFECTS; SILICON; SPATIAL DISTRIBUTION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THICKNESS
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; DISTRIBUTION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; LINE DEFECTS; MATERIALS; SEMICONDUCTOR MATERIALS; SEMIMETALS; TEMPERATURE RANGE