Published February 15, 2009 | Version v1
Journal article

Great enhancement of pyroelectric properties for Ba0.65Sr0.35TiO3 films on Pt-Si substrates by inserting a self-buffered layer

  • 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China)

Description

(100)-Ba0.65Sr0.35TiO3 (BST) films were deposited on Pt/Ti/SiO2/Si substrates using a low-temperature self-buffered layer. X-ray diffraction and atomic force microscope investigations show that the microstructure of BST films strongly depends on surface morphology of annealed self-buffered layer. The mechanism of nucleus formation and the growth initiation of BST films on self-buffered layers were proposed. It was found that the pyroelectric properties of BST films can be greatly enhanced. The pyroelectric coefficient and material merit figure of (100)-BST films are 1.16x104 μC m-2 K-1 and 2.18x10-4 Pa-1/2, respectively. The detectivity of 9.4x107 cm Hz1/2 W-1 was obtained in the (100)-BST film capacitors thermally isolated by 500 nm SiO2 films

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
105
Journal Issue
4
Journal Page Range
p. 044107-044107.4
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
(c) 2009 American Institute of Physics