Published December 4, 2006 | Version v1
Journal article Metadata-only

InAs/InP single quantum wire formation and emission at 1.5 μm

Creators

  • 1. Instituto de Ciencia de Materiales, Universidad de Valencia, P.O. Box 22085, 46071 Valencia (Spain)
  • 2. Instituto de Microelectronica de Madrid (CSIC), Isaac Newton 8, 28760 Tres Cantos (Spain)

Description

Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wires at 1.5 μm. Additional sharp features are related to monolayer fluctuations of the two-dimensional InAs layer present during the early stages of the quantum wire self-assembling process

Additional details

Identifiers

DOI
10.1063/1.2403928;
arXiv
arXiv:cond-mat/0606134v2;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
89
Journal Issue
23
Journal Page Range
p. 233126-233126.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38047174
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ASYMMETRY; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WIRES; RESOLUTION; SEMICONDUCTOR MATERIALS; STRESSES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EMISSION; EPITAXY; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MICROSCOPY; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PNICTIDES

Optional Information

Notes
(c) 2006 American Institute of Physics