Published 1995
| Version v1
Miscellaneous
Open
Doping of amorphous chalcogenide semiconductor by MeV energy Ni-ion irradiation
Creators
- 1. Non-crystalline Semiconductor Laboratory Physics Department, Maharshi Dayanad University, Rohtak, (Indonesia)
Description
Short communication
Files
28072886.pdf
Files
(24.7 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:ef20086bfc647a74abed3b62f881edd3
|
24.7 kB | Preview Download |
Additional details
Publishing Information
- Publisher
- Accademic Press.
- Imprint Title
- Ninth international conference on ion beam modification of materials. Book of abstracts
- Imprint Pagination
- 452 p.
- Journal Page Range
- p. 10092.
- Report number
- INIS-AU--0004
Conference
- Title
- 9. international conference on ion beam modification of materials.
- Acronym
- IBMM'95
- Dates
- 5-10 Feb 1995.
- Place
- Canberra (Australia).
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 28072886
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; FERMI LEVEL; GERMANIUM SELENIDES; ION IMPLANTATION; LEAD COMPOUNDS; MEV RANGE 10-100; NICKEL IONS; PHYSICAL RADIATION EFFECTS; TEMPERATURE DEPENDENCE; THERMOELECTRIC PROPERTIES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; ELECTRICAL PROPERTIES; ENERGY LEVELS; ENERGY RANGE; GERMANIUM COMPOUNDS; IONS; MEV RANGE; PHYSICAL PROPERTIES; RADIATION EFFECTS; SELENIDES; SELENIUM COMPOUNDS