Published January 1976 | Version v1
Journal article Metadata-only

Neutron-irradiated silicon for highest power electronic devices

Creators

Description

The article reports on the doping of silicon with phosphorus via the irradiation of 30Si with thermal neutrons and the decay of 31Si into 31P. This method enables the production of semiconducter contructional elements with extreme properties. (WL/AK)

Abstract (German)

Berichtet wird ueber das Verfahren zur Dotierung von Silicium mit Phosphor ueber die Bestrahlung von 30Si mit thermischen Neutronen und dem Zerfall von 31Si in 31P. Nach diesem Verahren lassen sich Halbleiterbauelemente mit extremen Eigenschaften herstellen. (WL)

Additional details

Additional titles

Original title (German)
Neutronenbestrahltes Silizium fuer Hoechstleistungsbauelemente

Publishing Information

Journal Title
Phys. Unserer Zeit
Journal Volume
7
Journal Issue
1
Series
Phys. Unserer Zeit.
Journal Page Range
1-2

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
7257331
Subject category
S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
CRYSTAL DOPING; NEUTRON BEAMS; NEUTRON REACTIONS; PHOSPHORUS 31; SEMICONDUCTOR DEVICES; SILICON; SILICON 31
Descriptors DEC
BARYON REACTIONS; BEAMS; BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; ELEMENTS; EVEN-ODD NUCLEI; HADRON REACTIONS; HOURS LIVING RADIOISOTOPES; ISOTOPES; LIGHT NUCLEI; NUCLEAR REACTIONS; NUCLEI; NUCLEON BEAMS; NUCLEON REACTIONS; ODD-EVEN NUCLEI; PARTICLE BEAMS; PHOSPHORUS ISOTOPES; RADIOISOTOPES; SEMIMETALS; SILICON ISOTOPES; STABLE ISOTOPES

Optional Information

Notes
3 figs.; 1 ref.