Investigation of optical phonon modes and free carriers properties of semi magnetic semiconductor Cd Te-Cd1-xMnxTe multiple quantum wells

In this work, we investigated the transverse and longitudinal optical phonons modes and electronic properties of semi magnetic semiconductor Cd Te-Cd1-xMnxTe multiple quantum wells in the presence of magnetic field parallel to surface of layers (Voigt geometry) by using the effective medium magneto plasmon approach. Since, far infrared reflection spectra for S- polarization ray is independence of cyclotron frequencies and as a result is independent from magnetic field, so we investigated only p- polarized magneto reflection spectra. Modified random element iso displacement method is used to calculate the optical phonon modes of Cd1-xMnxTe layer. Also, we can be used from data obtain from reflectivity and dependence of cyclotron frequencies to effective mass and carrier concentration to determine the cyclotron effective mass and carrier concentration of both species of carriers (electron and hole) in the samples.