Published September 1, 2007 | Version v1
Journal article

Pressure-temperature phase diagrams of in-plane doped CeRhIn5

  • 1. Instituto de Fisica Gleb Wataghin, UNICAMP, 13083-970 Campinas (Brazil)
  • 2. Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, 22453-900 Rio de Janeiro (Brazil)
  • 3. Centro Brasileiro de Pesquisas Fisicas, Rua Dr. Xavier Sigaud 150, 22290-180 Rio de Janeiro (Brazil)
  • 4. Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

Description

In this work, we report a combined study about the effects of pressure and in-plane doping on the low temperature properties of AFM CeRhIn5. We have explored two different kinds of in-plane doping to perturb the AFM state of CeRhIn5. The La-doping in the Ce-site, which suppresses the AFM order simply by dilution and the Sn-doping in the In-sites, that suppresses the AFM order by increasing the Kondo-coupling. Electrical resistivity measurements under pressure were performed and the extracted pressure-temperature diagrams for these in-plane perturbed CeRhIn5 single crystals are compared to the properties of the pure compound

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physc.2007.03.077

Additional details

Identifiers

DOI
10.1016/j.physc.2007.03.077;
PII
S0921-4534(07)00207-9;

Publishing Information

Journal Title
Physica. C, Superconductivity
Journal Volume
460-462
Journal Page Range
p. 672-673
ISSN
0921-4534
CODEN
PHYCE6

Conference

Title
8. international conference on materials and mechanisms of superconductivity and high temperature superconductors
Acronym
M2S-HTSC VIII
Dates
9-14 Jul 2006
Place
Dresden (Germany)

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.