Published 2001 | Version v1
Miscellaneous Metadata-only

Comparison of CSVT, LPE, and VPE GaAs and AlGaAs layers by electrical measurements

Creators

  • 1. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest (Hungary)
  • 2. Budapest Polytechnic, Institute of Microelectronics and Technology, Budapest (Hungary)

Description

no abstract available

Part of:
Abstracts of 6. Polish Conference on Crystal Growth

Additional details

Publishing Information

Imprint Title
Abstracts of 6. Polish Conference on Crystal Growth
Imprint Pagination
120 p.
Journal Page Range
p. 97

Conference

Title
6. Polish Conference on Crystal Growth
Dates
20-23 May 2001
Place
Poznan (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
33034069
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ALUMINIUM; ALUMINIUM COMPOUNDS; ANNEALING; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; FERMI LEVEL; GALLIUM ARSENIDES; GERMANIUM; GOLD; HETEROJUNCTIONS; LAYERS; LIQUID PHASE EPITAXY; NICKEL; SCHOTTKY BARRIER DIODES; THIN FILMS; TITANIUM; VAPOR PHASE EPITAXY; WATER VAPOR
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY LEVELS; EPITAXY; EQUIPMENT; FILMS; FLUIDS; GALLIUM COMPOUNDS; GASES; HEAT TREATMENTS; METALS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; TRANSITION ELEMENTS; VAPORS

Optional Information

Contract/Grant/Project number
HNSRF grant nos T020315 and T035272