Published April 15, 1979 | Version v1
Journal article Metadata-only

Electrical properties of CuGaTe2 epitaxial layers

Creators

  • 1. Karl-Marx-Universitaet, Leipzig (German Democratic Republic). Sektion Physik
  • 2. Karl-Marx-Universitaet, Leipzig (German Democratic Republic). Sektion Chemie

Description

The electrical properties of epitaxial layers of CuGaTe2 on GaAs substrates are investigated as a function of the growth temperature. The layers are always p-type conducting and show an increase of the hole concentration with rising growth temperature. Two acceptor states with ionization energies of (140 +- 5)MeV and about 450 MeV are found. The results are discussed with regard to some general trends found in the Cu-III-VI2 compounds. (author)

Additional details

Publishing Information

Journal Title
Phys. Status Solidi A
Journal Volume
52
Journal Issue
2
Series
Phys. Status Solidi A.
Journal Page Range
559-564
ISSN
0031-8965

INIS

Country of Publication
Germany
Country of Input or Organization
German Democratic Republic
INIS RN
10481683
Subject category
S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
BINDING ENERGY; COPPER TELLURIDES; ELECTRONS; EXPERIMENTAL DATA; GALLIUM TELLURIDES; GRAPHS; HOLE MOBILITY; HOLES; ISOLATED VALUES; LAYERS; LOW TEMPERATURE; MEDIUM TEMPERATURE; TEMPERATURE DEPENDENCE; VALENCE
Descriptors DEC
CHALCOGENIDES; COPPER COMPOUNDS; DATA; DATA FORMS; ELEMENTARY PARTICLES; ENERGY; FERMIONS; GALLIUM COMPOUNDS; INFORMATION; LEPTONS; MOBILITY; NUMERICAL DATA; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS